Nuclear Technology and Energy

Evaluation of leakage current variations of silicon diode irradiated by reactor neutrons using molecular dynamic calculations

https://doi.org/10.48308/nucte.2022.99016
Volume 1, Issue 1 - Serial Number 1
Spring 2022
Pages 24-35
Nuclear Technology and Energy

Authors

سارا شوریان 1
hamid jafari 2
سید امیر حسین فقهی 1

1 دانشگاه شهید بهشتی

2 SBU

Abstract
In this work, the leakage current variation of a silicon diode, as the basic element of many electronic components, has been investigated in the exposure by neutron spectrum of a typical thermal rector. To determine the PKA spectrum, the MCNPX Monte Carlo code has been used to calculate the non-ionizing energy loss in the device. Molecular Dynamic Calculations are used to determine the number of reactor neutron induced defects in a silicon diode. The simulation of electrical parameters for irradiation of reactor neutron was also done by SILVACO software. The results show that the leakage current increases by about 6.82 times the amount of it before irradiation, up to about 3.54 nA/μm by the exposure of neutrons.

Keywords

Leakage current
Silicon diode
SILVACO
Molecular dynamic
MCNPX
Reactor neutron spectrum
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